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| Infrared Emitting Diode(GaAs) KEL1001L The KEL1001L, high-power GaAs IRED mounted in a clear side-looking package, is compact, narrow radiant angle, and easy to mount. Dimensions [Unit : mm] Features High power with narrow radiant angle Side-looking with plastic package RoHS Compliant Applications Photointerrupter Optical switches Mouse, toys G.Tolerance : 0.2 Absolute Maximum Ratings Parameter Forward Current Reverse Voltage Pulse Forward Current*1 Power Dissipation Operating Temperature Storage Temperature Soldering Temperature *2 [TA = 25 Symbol IF VR IFP PD Topr. Tstg. Tsol Rating 50 5 1 100 -25~+85 -30~+100 260 Unit mA V A mW ] *1. Pulse width tw=100sec, cycle T=10msec *2. Distance from end of the package =2mm, time=5sec, Max. Electro-Optical Characteristics Parameter Forward Voltage Reverse Current Capacitance Radiant intensity Peak Wavelength Spectral Width at FWHM Half Angle -1Symbol VF IR CT PO p Conditions IF=20 VR=5V f=1 IF=20 IF=20 Min. Typ. 1.2 25 5 940 50 10 Max. 2.0 100 - [TA = 25 Unit. V A /sr nm nm degrees ] Infrared Emitting Diode(GaAs) KEL1001L Power dissipation Vs. Ambient temperature 125 50 Forward current Vs. Forward voltage Ta=25 Ta=25 Power dissipation PD (mW) Forward current IF 100 40 30 75 50 20 25 10 0 0 20 40 60 80 100 0 0.5 1.0 1.5 2.0 Ambient temperature T a ( ) Forward voltage VF (V) Radiant intensity Vs. Forwardb current Ta=25 Ta=25 101 Realtive radiant intensity Vs. Ambient temperature Relative radiant intensity Po Radiant intensity Po 102 100 101 10 -1 100 10-2 10-1 100 101 102 103 -20 0 20 40 60 80 100 Forward current IF Ambient temperature T a ( ) Relative intensity Vs. Wavelength Ta=25 Ta=25 Sensitivity Diagram Angular Displacement Angle(deg.) 0 +4 +60 Ta=25 Ta=25 Relative intensity (%) 100 +20 0 -20 80 -4 0 0 -6 60 40 20 -80 -100 +80 +100 0 100 0 400 500 600 700 800 900 1000 1100 50 50 Wavelength (nm) 100 Relative Output (%) -2- |
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